List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by Pure Play foundries, that manufacture designs from fabless companies and do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms
  • Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
  • Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
  • Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
  • Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
  • Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

Operating fabs include:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (mm) Process technology node (nm) Production capacity (Wafers/Month) Technology / products
UMC - He Jian Fab 8N China,
Suzhou		 0.750,[1] 1.2, +0.5 2003, May[1] 200 4000–1000, 500, 350, 250, 180, 110 77,000 Foundry
UMC Fab 6A Taiwan,
Hsinchu		 0.35[1] 1989[1] 150 450 31,000 Foundry
UMC Fab 8AB Taiwan,
Hsinchu		 1[1] 1995[1] 200 250 67,000[2] Foundry
UMC Fab 8C Taiwan,
Hsinchu		 1[1] 1998[1] 200 350–110 37,000 Foundry
UMC Fab 8D Taiwan,
Hsinchu		 1.5[1] 2000[1] 200 90 31,000 Foundry
UMC Fab 8E Taiwan,
Hsinchu		 0.96[1] 1998[1] 200 180 37,000 Foundry
UMC Fab 8F Taiwan,
Hsinchu		 1.5[1] 2000[1] 200 150 40,000 Foundry
UMC Fab 8S Taiwan,
Hsinchu		 0.8[1] 2004[1] 200 350–250 31,000 Foundry
UMC Fab 12A Taiwan,
Tainan		 4.65, 4.1, 6.6, 7.3[1] 2001, 2010, 2014, 2017[1] 300 28, 14 87,000[2] Foundry
UMC Fab 12i Singapore 3.7[1] 2004[1] 300 130–40 53,000 Foundry
UMC - United Semiconductor Fab 12X China,
Xiamen		 6.2 2016 300 55–28 19,000-25,000 (2021) Foundry
UMC - USJC (formerly MIFS) (formerly Fujitsu) Fab 12M (original Fujitsu installations)[3] Japan,
Mie Prefecture		 1974 150, 200, 300[4] 90–40 33,000 Foundry
Texas Instruments FFAB Germany,
Bavaria,
Freising		 200 1000–180
Texas Instruments (formerly National Semiconductor) MFAB[5] USA,
Maine,
South Portland		 .932 1997 200 350, 250, 180
Texas Instruments RFAB USA,
Texas,
Richardson		 2009 300 180, 130 BiCMOS
Texas Instruments DMOS6 USA,
Texas,
Dallas		 300 130–65, 45
Texas Instruments DMOS5 USA,
Texas,
Dallas		 200 180 BiCMOS
Texas Instruments DFAB USA,
Texas,
Dallas		 1964 150/200 1000–500
Texas Instruments SFAB USA,
Texas,
Sherman		 150 2000–1000
Texas Instruments DHC USA,
Texas,
Dallas		 2019[6] Foundry
Texas Instruments DBUMP USA,
Texas,
Dallas		 2018[7] Foundry
Texas Instruments MIHO8 Japan,
Ibaraki,
Miho		 200 350–250 BiCMOS
Texas Instruments (formerly Spansion) Aizu Japan,
Fukushima,
Aizu		 200 110
Texas Instruments (formerly SMIC - Cension) Chengdu (CFAB) China,
Sichuan,
Chengdu		 200
Tsinghua Unigroup[8] China,
Nanjing		 10 (first phase), 30 Planned 300 100,000 (first phase) 3D NAND Flash
Tsinghua Unigroup - XMC (formerly Xinxin)[9] Fab 1 China,
Wuhan[1]		 1.9 2008 300 90, 65, 60, 50, 45, 40, 32 30,000[10] Foundry, NOR
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (formerly Xinxin)[9][10][8] Fab 2 China,
Wuhan		 24 2018[1] 300 20 200,000 3D NAND
SMIC S1 Mega Fab (S1A/S1B/S1C)[11] China,
Shanghai		 200 350–90 114,000[12] Foundry
SMIC S2 (Fab 8)[11] China,
Shanghai		 300 45/40–32/28 20,000[12] Foundry
SMIC - SMSC SN1[11] China,
Shanghai		 10 (expected) (planned) 300 12 / 14 70,000[9] Foundry
SMIC B1 Mega Fab (Fab 4, Fab 6)[11] China,
Beijing		 2004 300 180–90/55 50,000[12] Foundry
SMIC B2A[11] China,
Beijing		 3.59[13] 2014 300 45/40–32/28 35,000[12] Foundry
SMIC Fab 7[11] China,
Tianjin		 2004 200 350–90 50,000[12] Foundry
SMIC Fab 15[11] China,
Shenzhen		 2014 200 350–90 50,000[12] Foundry
SMIC SZ (Fab 16A/B)[11] China,
Shenzhen		 2019 300 8 / 14 40,000[9] Foundry
SMIC[9] B3 China,
Beijing		 7.6 Under construction 300 35,000 Foundry
Wuxi Xichanweixin (formerly SMIC - LFoundry) (formerly LFoundry) (formerly Micron)[14] (formerly Texas Instruments) LF Italy,
Abruzzo,
Avezzano		 1995 200 180–90 50,000
Nanya Fab Taiwan 199x 300 DRAM
Nanya Fab 2 Taiwan,
Linkou		 0.8 2000 200[15] 175 30,000 DRAM
Nanya Fab 3A[16] Taiwan,
New Taipei City[17]		 1.85[18] 2018 300 20 DRAM
Micron Fab 1 USA,
Virginia,
Manassas		 1981 300 DRAM
(future Texas Instruments) Micron (formerly IM Flash) Fab 2 IMFT USA,
Utah,
Lehi		 300 25[19] 70,000 DRAM, 3D XPoint
Micron Fab 4[20] USA,
Idaho,
Boise		 300 RnD
Micron (formerly Dominion Semiconductor) Fab 6 USA,
Virginia,
Manassas		 1997 300 25[19] 70,000 DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor) Fab 7 (formerly TECH Semiconductor, Singapore)[21] Singapore 300 60,000 NAND FLASH
Micron (formerly IM Flash)[22] Fab 10[23] Singapore 3 2011 300 25 100,000 NAND FLASH
Micron (formerly Inotera) Fab 11[24] Taiwan,
Taoyuan		 300 20 and under 80,000 DRAM
Micron Fab 13[25] Singapore 200 NOR
Micron Singapore[26] 200 NOR Flash
Micron Micron Semiconductor Asia Singapore[26]
Micron China,
Xi'an[26]
Micron (formerly Elpida Memory) Fab 15 (formerly Elpida Memory, Hiroshima)[20][26] Japan,
Hiroshima		 300 20 and under 100,000 DRAM
Micron (formerly Rexchip) Fab 16 (formerly Rexchip, Taichung)[20] Taiwan,
Taichung		 300 30 and under 80,000 DRAM, FEOL
Micron (formerly Cando) Micron Memory Taiwan[26] Taiwan,
Taichung		 ?, 2018 300 DRAM, BEOL
Micron A3 Taiwan,
Taichung[27]		 Under construction 300 DRAM
Intel D1B USA,
Oregon,
Hillsboro		 1996 300 10 / 14 / 22 Microprocessors[28]
Intel D1C[29][28] USA,
Oregon,
Hillsboro		 2001 300 10 / 14 / 22 Microprocessors[28]
Intel D1D[29][28] USA,
Oregon,
Hillsboro		 2003 300 7 / 10 / 14 Microprocessors[28]
Intel D1X[30][28] USA,
Oregon,
Hillsboro		 2013 300 7 / 10 / 14 Microprocessors[28]
Intel Fab 12[29][28] USA,
Arizona,
Chandler		 1996 300 14 / 22 / 65 Microprocessors & chipsets[28]
Intel Fab 32[29][31] USA,
Arizona,
Chandler		 3 2007 300 45
Intel Fab 32[29][28] USA,
Arizona,
Chandler		 2007 300 22 / 32 Microprocessors[28]
Intel Fab 42[32][33][28] USA,
Arizona,
Chandler		 10[34] 2020[35] 300 7 / 10 Microprocessors[28]
Intel Fab 52, 62[36][37] USA,
Arizona,
Chandler		 20[36] 2024[36] Microprocessors[36]
Intel Fab 11x[29][28] USA,
New Mexico,
Rio Rancho		 2002 300 32 / 45 Microprocessors[28]
Intel (formerly Micron) (formerly Numonyx) (formerly Intel) Fab 18[38] Israel,
Southern District,
Kiryat Gat		 1996 200, 300 45 / 65 / 90 / 180 Microprocessors and chipsets,[39] NOR flash
Intel Fab 10[29] Ireland,
County Kildare,
Leixlip		 1994 200
Intel Fab 14[29] Ireland,
County Kildare,
Leixlip		 1998 200
Intel Fab 24[29][28] Ireland,
County Kildare,
Leixlip		 2004 300 14 / 65 / 90[40] Microprocessors, Chipsets and Comms[28]
Intel Fab 28[29][28] Israel,
Southern District,
Kiryat Gat		 2008 300 10 / 22 / 45 Microprocessors[28]
Intel Fab 68[29][41] China,
Dalian		 2.5 2010 300 65[42] 30,000–52,000 Microprocessors (former), VNAND[28]
Intel Costa Rica,
Heredia,
Belén		 1997 300 14 / 22 Packaging
Tower Semiconductor (formerly Maxim)(formerly Philips)(formerly VLSI) Fab 9[43][44] USA,
Texas,
San Antonio		 2003 200 180 Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor) Fab 1[45] Israel,
Northern District,
Migdal HaEmek		 0.235[1] 1989, 1986[1] 150 1000–350 14,000 Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor Fab 2[45] Israel,
Northern District,
Migdal HaEmek		 1.226[1] 2003 200 180–130 51,000[1] Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) Fab 3,[45] Newport Beach[1] USA,
California,
Newport Beach		 0.165[1] 1967, 1995[1] 200 130–500 25,000[1] Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 5,[45] Tonami[46] Japan,
Tonami		 1994 200 500–130 Foundry, Analog/Mixed-Signal,Power,Discrete, NVM, CCD
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 7,[45] Uozu[46] Japan,
Uozu		 1984 300 65. 45 Foundry, CMOS,CIS,RF SOI, Analog/Mixed-Signal
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 6,[45] Arai[46] Japan,
Arai		 1976 200 130–110 Foundry, Analog/Mixed-Signal,CIS,NVM,Thick Cu RDL
Nuvoton[47] Fab2 Taiwan 150 350–1000 nm 45,000[47] Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
Nuvoton Nuvoton Technology Corporation Taiwan,
Hsinchu Science Park
ISRO SCL[48] India,
Mohali		 2006 200 180 MEMS, CMOS, CCD, N.S.
STAR-C[49][50] MEMS[50] India,
Bangalore		 1996 150 1000–500 MEMS
STAR-C[49][50] CMOS[50] India,
Bangalore		 1996 150 1000–500 CMOS
GAETEC[49][51] GaAs[51] India,
Hyderabad		 1996 150 700–500 MESFET
General Motors Components Holdings Fab III USA,
Indiana,
Kokomo		 125/200 500+
Raytheon Systems Ltd UK,
Scotland,
Glenrothes		 1960 100 CMOS-on-SiC, foundry
BAE Systems (formerly Sanders) USA,
New Hampshire,
Nashua[1]		 1985[1] 100, 150 140, 100, 70, 50 MMIC, GaAs, GaN-on-SiC, foundry
Flir Systems USA,
California,
Santa Barbara[52]		 150 IR Detectors, Thermal Imaging Sensors
Teledyne DALSA Teledyne DALSA Semiconductor Canada,
Quebec,
Bromont		 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
Teledyne e2v Teledyne e2v UK,
England,
Essex,
Chelmsford		 1980 150/200 CCD Fab, CMOS Packaging, III-V, MCT, 6 inch and 8 inch backthinning
Qorvo (formerly RF Micro Devices) USA,
North Carolina,
Greensboro[53]		 100,150 500 8,000 SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) USA,
Texas,
Richardson[53]		 0.5 1996 100, 150, 200 350, 250, 150, 90 8,000 DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor) USA,
Oregon,
Hillsboro[53]		 100, 150 500 Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung) X3[54] USA,
California,
San Jose		 ?, 1997, 2015[55] 600–90
Analog Devices Limerick Ireland,
County Limerick,
Limerick		 200
Analog Devices Wilmington USA,
Massachusetts,
Wilmington		 200/150
Analog Devices (formerly Linear Technology) Hillview USA,
California,
Milpitas		 150
Analog Devices (formerly Linear Technology) Camas USA,
Washington,
Camas		 150
Analog Devices (formerly Maxim Integrated) MaxFabNorth[56] USA,
Oregon,
Beaverton
Microchip (formerly California Micro Devices) (formerly GTE) Fab 2 USA,
Arizona,
Tempe		 130, 150, 200 5000–350
Microchip (formerly Fujitsu) Fab 4 USA,
Oregon,
Gresham		 2004 200 500–130
Microchip (formerly Atmel) Fab 5 USA,
Colorado,
Colorado Springs		 150 1000–250
Rohm[57] (formerly Renesas) Shiga Factory Japan 200 150 IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[57][58] Miyasaki Japan 150 MEMS
Rohm (Lapis Semiconductor)[57] Building No.1 Japan 1961[59] Transistors
Rohm (Lapis Semiconductor)[57] Building No.2 Japan 1962[59] Transistors
Rohm (Lapis Semiconductor)[57] Building No.3 Japan 1962[59] Transistors
Rohm (Lapis Semiconductor)[57] Building No.4 Japan 1969[59] Transistors
Rohm (Lapis Semiconductor)[57] Chichibu Plant Japan 1975[59] DRAM
Rohm (Lapis Semiconductor)[57] VLSI Laboratory No. 1 Japan 1977[59] VLSI
Rohm (Lapis Semiconductor)[57] VLSI Laboratory No. 2 Japan 1983[59]
Rohm (Lapis Semiconductor)[57] VLSI Laboratory No. 3 Japan 1983[59] DRAM
Rohm (Lapis Semiconductor)[57] Oregon Plant USA,
Oregon		 1990[59]
Rohm (Lapis Semiconductor)[57] Thailand 1992[59]
Rohm (Lapis Semiconductor)[57] ULSI Laboratory No. 1 Japan 1992[59] 500 DRAM
Rohm (Kionix)[60] Ithaca USA,
New York,
Ithaca		 150 MEMS
Rohm (Kionix)[60] (formerly Renesas Kyoto) Kyoto Japan,
Kyoto		 200 MEMS
Oki Electric Industry[61] Japan,
Tokyo,
Minato-ku		 1961 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[61] Miyazaki Oki Electric Co 1981 100, 150, 130, 76 3000 7,200 Bipolar, Mask ROM, DRAM[59]
Oki Electric Industry[61] Miyagi Facility 1988[59] 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[61] Hachioji Facility 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[62] 150 180–150 SoCs, LSI, Logic, Memory
Fuji Electric[63] Omachi Japan,
Nagano Prefecture
Fuji Electric[64] Iyama Japan,
Nagano Prefecture
Fuji Electric[65] Hokuriku Japan,
Toyama prefecture
Fuji Electric[66] Matsumoto Japan,
Nagano prefecture
Fujitsu Kawasaki Japan,
Kawasaki		 1966[67]
Fujitsu[68][69] Fab B1 (at Mie)[70] Japan, 1500 Tadocho Mizono, Kuwana, Mie[71] 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu[68][69] Fab B2 (at Mie)[70] Japan, 1500 Tadocho Mizono, Kuwana, Mie[71] 1 (total)[72] 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[73]
Fujitsu[68][69] Japan, 1500 Tadocho Mizono, Kuwana, Mie[71] 2015 300 40[74] 5,000 Foundry
Fujitsu Kumagaya Plant[70] Japan,
Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801		 1974
Fujitsu[75] Suzaka Plant Japan,
Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Fujitsu Iwate Plant[76][4] Japan,
Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
Denso (formerly Fujitsu)[77] Denso Iwate[78][79][80] Japan,
Iwate Prefecture, Kanegasaki-cho		 0.088 Under construction, 2019, May (planned) Semiconductor wafers and sensors (since June 2017)
Canon Inc. Oita[81] Japan
Canon Inc. Kanagawa[82] Japan
Canon Inc. Ayase[81] Japan
Sharp Corporation Fukuyama[83] Japan
Japan Semiconductor

[84]

 Iwate Japan
Japan Semiconductor[84] Oita Japan
Kioxia Yokkaichi Operations[85][86] Japan,
Yokkaichi		 1992 173,334[87][88][89][90] Flash Memory
Kioxia/SanDisk Fab 5 Phase 1 (at Yokkaichi Operations) Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[91] 2011 Flash
Kioxia/SanDisk Fab 5 Phase 2[91] (at Yokkaichi Operations) Japan,
Mie		 2011 300 15[92] Flash
Kioxia[93] Fab 3 (at Yokkaichi Operations) Japan,
Yokkaichi		 NAND Memory
Kioxia[94] Fab 4 (at Yokkaichi Operations) Japan,
Yokkaichi		 2007 NAND Memory
Kioxia[95] Kaga Toshiba Japan,
Ishikawa		 Power semiconductor devices
Kioxia[96] Oita Operations Japan,
Kyushu
Kioxia[97][98] Fab 6 (phase 1) (at Yokkaichi Operations)[99] Japan,
Yokkaichi		 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[100][86] 2018 BiCS FLASH™
Kioxia[97][98] Fab 6 (phase 2) (at Yokkaichi Operations) Japan,
Yokkaichi		 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[100][86] Planned BiCS FLASH™
Kioxia[97][98] Japan,
Yokkaichi		 4.6[101][102] Planned BiCS FLASH™
Kioxia[97] Fab 2 (at Yokkaichi Operations) Japan,
Yokkaichi		 1995 3D NAND
Kioxia[103][104] New Fab 2 (at Yokkaichi Operations) Japan,
Yokkaichi		 2016, July 15 3D NAND
Kioxia[105][106][107][108] Japan,
Iwate Prefecture		 Under Construction 3D NAND
Western Digital[109][110]
Hitachi[111] Rinkai Factory Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 MEMS Foundry
Hitachi[111] Haramachi Factory Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power semiconductors
Hitachi[111] Yamanashi Factory Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power semiconductors
ABB[112] Lenzburg Switzerland,
Aargau,
Lenzburg		 0.140 2010 (second phase) 130, 150 18,750 (225,000 per year) High power semiconductors, diodes, IGBT, BiMOS
ABB[112] Czech Republic
EM Microelectronic EM Marin Switzerland,
La Tène, Neuchâtel
Mitsubishi Electric[113] Power Device Works, Kunamoto Site Japan Power semiconductors
Mitsubishi Electric[113] Power Device Works, Fukuoka Site Japan,
Kunamoto Prefecture,
Fukuoka City[114]		 Power semiconductors and sensors[114]
Mitsubishi Electric[115] High frequency optical device manufacturing plant Japan,
Hyogo Prefecture[115]		 High frequency semiconductor devices (GaAsFET, GaN, MMIC)[115]
Powerchip Semiconductor Memory Foundry, Fab P1[116][117] Taiwan,
Hsinchu		 2.24[1] 2002[1] 300 90, 70, 22[118] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2[117] Taiwan,
Hsinchu,
Hsinchu Science Park		 1.86[1] 2005[1] 300 90, 70, 22[118] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix) Fab P3[117] Taiwan,
Hsinchu,
Hsinchu Science Park		 300 90, 70, 22[118] 20,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ProMOS) ProMOS Fab 4[119][120] Taiwan,
Taichung		 1.6 300 70
Macronix (formerly ProMOS)[121] Fab 5 300 50,000
Macronix[121] Fab 2 200 48,000
(future Foxconn) Macronix[121] Fab 1 150 40,000
Renesas[122] Naka Factory Japan 2009 300 28[123]
Renesas (formerly Trecenti) Japan[124][125] 300 180, 90, 65 Foundry
Renesas[122] Takasaki Factory Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas[122] Shiga Factory Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555
Renesas[122] Yamaguchi Factory Japan, 20192–3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298
Renesas[122] Kawashiri Factory Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861-4195
Renesas[122] Saijo Factory Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas[122] Musashi Site Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588
Renesas (formerly NEC Electronics) (formerly NEC) Roseville[126][127] USA,
California,
Roseville		 1.2[128] 2002, April 200 RAM, SoCs, Multimedia Chips
Renesas-Intersil[122] 1 Murphy Ranch Rd USA,
California,
Milpitas
Integrated Device Technology USA,
Oregon,
Hillsboro		 1997 200 140–100[129]
NEC[61] 100, 130, 150 SRAM, DRAM
NEC[130] Japan DRAM
TSI Semiconductors[131] (formerly Renesas) Roseville fab, M-Line, TD-Line, K-Line[132][1] USA,
California,
Roseville		 1992, 1985[1] 200
TDK - Micronas FREIBURG[133][134] Germany,
19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas) Tsuruoka Higashi[135][136] 125[137]
TDK Japan,
Saku[138]
TDK - Tronics USA,
Texas,
Addison[139]
Silanna (formerly Sapphicon Semiconductor) Australia,
New South Wales,
Sydney[1]		 0.030 1965,1989[1] 150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) Australia,
New South Wales,
Sydney

[140]

 150 500, 250 RF CMOS, SOS, foundry
Murata Manufacturing[141] Nagano[137] Japan 0.100 SAW filters[137]
Murata Manufacturing[141] Otsuki[137] Japan
Murata Manufacturing[141] Kanazawa Japan 0.111 SAW filters[137]
Murata Manufacturing (formerly Fujifilm)[142][143] Sendai Japan,
Miyagi Prefecture		 0.092[137] MEMS[144]
Murata Manufacturing[142] Yamanashi Japan,
Yamanashi Prefecture
Murata Manufacturing[145] Yasu Japan,
Shiga Prefecture,
Yasu
Murata Electronics (Finland)[146] (formerly VTI, since 1979 Vaisalas int. semicon. line)[147] Vantaa Finland 2012,[148] expanded 2019[149] 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[150]
Mitsumi Electric[151] Semiconductor Works #3 Japan,
Atsugi Operation Base		 2000
Mitsumi Electric[151] Japan,
Atsugi Operation Base		 1979
Sony[152] Kagoshima Technology Center Japan,
Kagoshima		 1973 Bipolar CCD, MOS, MMIC, SXRD
Sony[152] Oita Technology Center Japan,
Oita		 2016 CMOS Image Sensor
Sony[152] Nagasaki Technology Center Japan,
Nagasaki		 1987 MOS LSI, CMOS Image Sensors, SXRD
Sony[152] Kumamoto Technology Center Japan,
Kumamoto		 2001 CCD Image Sensors, H-LCD, SXRD
Sony[152] Shiroishi Zao Technology Center Japan,
Shiroishi		 1969 Semiconductor Lasers
Sony Sony Shiroishi Semiconductor Inc. Japan,
Miyagi		 Semiconductor Lasers[153]
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[152][154][155] Yamagata Technology Center Japan,
Yamagata		 2014 CMOS Image Sensor, eDRAM (formerly)
MagnaChip F-5[156] 2005 200 130
SK Hynix[157] China,
Chongqing
SK Hynix[157] China,
Chongqing
SK Hynix[158][159] South Korea,
Cheongju,
Chungcheongbuk-do		 Under construction[160] NAND Flash
SK Hynix[159] South Korea,
Cheongju		 Under construction NAND Flash
SK Hynix M8 South Korea,
Cheongju		 200 Foundry
SK Hynix M10 South Korea,
Icheon		 300 DRAM
SK Hynix M11 South Korea,
Cheongju		 300 NAND Flash
SK Hynix M12 South Korea,
Cheongju		 300 NAND Flash
SK Hynix HC1 China,
Wuxi		 300 100,000[9] DRAM
SK Hynix HC2 China,
Wuxi		 300 70,000[9] DRAM
SK Hynix M14 South Korea,
Icheon		 300 DRAM, NAND Flash
SK Hynix[159] M16 South Korea,
Incheon		 3.13 (13.4 total planned) 2021 (planned) 300 10 (EUV) 15,000-20,000 (initial) DRAM
LG Innotek[161] Paju South Korea,
570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842		 LED Epi-wafer, Chip, Package
Diodes Incorporated[162] (formerly Zetex Semiconductors) OFAB UK,
England,
Greater Manchester,
Oldham		 150
Diodes Incorporated (formerly BCD Semi)[163] China 150 4000–1000
Diodes Incorporated (formerly Texas Instruments) GFAB UK,
Scotland,
Greenock		 150/200 40,000
Lite-On Optoelectronics[164] China,
Tianjin
Lite-On Optoelectronics[164] Thailand,
Bangkok
Lite-On Optoelectronics[164] China,
Jiangsu
Lite-On Semiconductor[165] Keelung Plant Taiwan,
Keelung		 1990 100 Thyristor, DIscrete
Lite-On Semiconductor[165] Hsinchu Plant Taiwan,
Hsinchu		 2005 Bipolar BCD, CMOS
Lite-On Semiconductor[165] Lite-On Semi (Wuxi) China,
Jiangsu		 2004 100 Discrete
Lite-On Semiconductor[165] Wuxi WMEC Plant China,
Jiangsu		 2005 Discrete, Power, Optical ICs
Lite-On Semiconductor[165] Shanghai (SSEC) Plant China,
Shanghai		 1993 76 Fab, Assembly
Trumpf[166] (formerly Philips Photonics) Germany,
Baden-Württemberg,
Ulm		 VCSEL
Philips[167] Netherlands,
North Brabant,
Eindhoven		 200,150 30,000 R&D, MEMS
NEWPORT WAFER FAB[168] (formerly Infineon Technologies) FAB11 UK,
Wales,
Newport		 200[169] 180–700[169] 32,000[169] Foundry, Compound Semiconductors, IC, MOSFET, IGBT[170]
Nexperia (formerly NXP Semiconductors) (formerly Philips) Hamburg site[171] Germany,
Hamburg		 1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) Manchester[171] UK,
England,
Greater Manchester,
Stockport		 1987? 150, 200 24,000 GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips) ICN8 Netherlands,
Gelderland,
Nijmegen		 200 40,000+[172] SiGe
NXP Semiconductors Japan[61] Bipolar, Mos, Analog, Digital, Transistors, Diodes
NXP Semiconductors - SSMC SSMC Singapore 1.7[1] 2001[1] 200 120 53,000 SiGe
NXP Semiconductors - Jilin Semiconductor China,
Jilin		 130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Oak Hill Fab[173] USA,
Texas,
Austin		 .8[174] 1991 200 250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Chandler Fab[175] USA,
Arizona,
Chandler[176]		 1.1[177] +0.1 (GaN) 1993 150 (GaN), 200 180 GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) ATMC[178] USA,
Texas,
Austin		 1995 200 90
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) MOTOFAB1[179] Mexico,
Jalisco,
Guadalajara		 2002
AWSC Taiwan,
Tainan[1]		 1999[1] 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions[180] (formerly Conexant) (formerly Rockwell) USA,
California,
Newbury Park		 100, 150 Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions[180] (formerly Alpha Industries) USA,
Massachusetts,
Woburn		 100, 150 RF/cellular components (SiGe, GaAs)
Skyworks Solutions[180] Japan,
Osaka		 SAW, TC-SAW Filters
Skyworks Solutions[180] Japan,
Kadoma		 SAW, TC-SAW Filters
Skyworks Solutions[180] Singapore,
Bedok South Road		 SAW, TC-SAW Filters
Win Semiconductor Fab A[181] Taiwan,
Taoyuan City		 150[182] 2000–10 Foundry, GaAs
Win Semiconductor Fab B[181] Taiwan,
Taoyuan City		 150[182] 2000–10 Foundry, GaAs, GaN
Win Semiconductor Fab C Taiwan,
Taoyuan[1]		 0.050, 0.178 2000, 2009[1] 150 Foundry, GaAs
ON Semiconductor (formerly Motorola) ISMF Malaysia,
Seremban		 150 350 80,000 Discrete
ON Semiconductor (formerly Truesense Imaging, Kodak) Rochester USA,
New York,
Rochester[183]		 CCDs and Image Sensors
ON Semiconductor (formerly LSI) Gresham[184] USA,
Oregon,
Gresham		 200 110
ON Semiconductor (formerly TESLA) Roznov Czech Republic,
Zlín,
Rožnov pod Radhoštěm		 150 5000
ON Semiconductor (formerly AMI Semiconductor) Pocatello[185] USA,
Idaho,
Pocatello		 1997[186] 200 350
ON Semiconductor (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec) Oudenaarde Belgium,
East Flanders,
Oudenaarde		 150 350 4,000
ON Semiconductor (formerly Sanyo)[187][188] Niigata Japan,
Niigata		 130, 150 350
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) USA,
Pennsylvania,
Mountain Top		 1960–1997 200 350
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) USA,
Maine,
South Portland		 1960–1997 200 350
ON Semiconductor (formerly Fujitsu)[189][190] Aizu Wakamatsu Plant[191] Japan,
Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502		 1970[67] 150, 200[192][193][194][195] Memory, Logic
ams[196] FAB B Austria,
Styria,
Unterpremstätten		 200 350
Osram (Osram Opto Semiconductors) Malaysia,
Kulim,
Kulim Hi-Tech Park		 0.350, 1.18[197] 2017, 2020 (second phase, planned)[198][199] 150 LEDs
Osram (Osram Opto Semiconductors) Malaysia,
Penang[200][201]		 2009 100 LEDs
Osram (Osram Opto Semiconductors) Germany,
Bavaria,
Regensburg[202]		 2003, 2005 (second phase)[203] LEDs
Winbond Memory Product Foundry[204] Taiwan,
Taichung		 300 46
Winbond CTSP Site[205][206] Taiwan,
No. 8, Keya 1st Rd.,Daya Dist.,Central Taiwan Science Park, Taichung City 42881		 300
Winbond[207] Planned 300
Vanguard International Semiconductor Fab 1 Taiwan,
Hsinchu		 0.997[1] 1994[1] 200 55,000 Foundry
Vanguard International Semiconductor (formerly Winbond) Fab 2 (formerly Fab 4&5)[208] Taiwan,
Hsinchu		 0.965[1] 1998[1] 200 55,000 Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) Fab 3E[209] Singapore 1.3[1] 200 180 34,000 Foundry
TSMC Fab 2[210] Taiwan,
Hsinchu		 0.735[1] 1990[1] 150 88,000[211][1] Foundry
TSMC Fab 3 Taiwan,
Hsinchu		 2[1] 1995[1] 200 100,000[1] Foundry
TSMC Fab 5 Taiwan,
Hsinchu		 1.4[1] 1997[1] 200 48,000[1] Foundry
TSMC Fab 6 Taiwan,
Tainan		 2.1[1] 2000, January; 2001[124] 200, 300 180–? 99,000[1] Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[212][213][214] Fab 7[215] Taiwan 200 350, 250, 220, 180 33,000 Foundry (current)

DRAM (former), Logic (former)

TSMC (formerly WSMC) Fab 8 Taiwan,
Hsinchu		 1.6[1] 1998[1] 200 250, 180 85,000[1] Foundry
TSMC (formerly WSMC)[125] 2000 200 250, 150 30,000 Foundry
TSMC China Company Fab 10 China,
Shanghai		 1.3[1] 2004[1] 200 74,000 Foundry
TSMC WaferTech Fab 11 USA,
Washington,
Camas		 1.2 1998 200 350, 250, 180, 160 33,000 Foundry
TSMC Fab 12 Taiwan,
Hsinchu		 5.2, 21.6 (total, all phases combined)[1] 2001[1] 300 150–28 77,500–123,800 (all phases combined)[1] Foundry
TSMC Fab 12A Taiwan,
Hsinchu		 300 25,000 Foundry
TSMC Fab 12B Taiwan,
Hsinchu		 300 25,000 Foundry
TSMC Fab 12 (P4) Taiwan,
Hsinchu		 6[1] 2009[1] 300 20 40,000[1] Foundry
TSMC Fab 12 (P5) Taiwan,
Hsinchu		 3.6[1] 2011[1] 300 20 6,800[1] Foundry
TSMC Fab 12 (P6) Taiwan,
Hsinchu		 4.2[1] 2013[1] 300 16 25,000 Foundry
TSMC Fab 12 (P7) Taiwan,
Hsinchu		 300 16 Foundry
TSMC Fab 14 Taiwan,
Tainan		 5.1[1] 2002,[124] 2004[1] 300 20 82,500[1] Foundry
TSMC Fab 14 (B) Taiwan,
Tainan		 300 16 50,000+[216] Foundry
TSMC Fab 14 (P3)[1] Taiwan,
Tainan		 3.1[1] 2008[1] 300 16 55,000[1] Foundry
TSMC Fab 14 (P4)[1] Taiwan,
Tainan		 3.750[1] 2011[1] 300 16 45,500[1] Foundry
TSMC Fab 14 (P5)[1] Taiwan,
Tainan		 3.650[1] 2013[1] 300 16 Foundry
TSMC Fab 14 (P6)[1] Taiwan,
Tainan		 4.2[1] 2014[1] 300 16 Foundry
TSMC Fab 14 (P7)[1] Taiwan,
Tainan		 4.850[1] 2015[1] 300 16 Foundry
TSMC Fab 15[217] Taiwan,
Taichung		 9.3 2011 300 20 100,000+(166,000 estimate)[218][216][219] Foundry
TSMC Fab 15 (B) Taiwan,
Taichung		 300 Foundry
TSMC Fab 15 (P1)[1] Taiwan,
Taichung		 3.125[1] 2011 300 4,000[1] Foundry
TSMC Fab 15 (P2)[1] Taiwan,
Taichung		 3.150[1] 2012[1] 300 Foundry
TSMC Fab 15 (P3)[1] Taiwan,
Taichung		 3.750[1] 2013[1] 300 Foundry
TSMC Fab 15 (P4)[1] Taiwan,
Taichung		 3.800[1] 2014[1] 300 Foundry
TSMC Fab 15 (P5)[1] Taiwan,
Taichung		 9.020[1] 2016[1] 300 35,000 Foundry
TSMC Fab 15 (P6 & P7) Taiwan,
Taichung		 2019 300 Foundry
TSMC Nanjing Company Fab 16 China,
Nanjing		 2018 300 20,000 Foundry
TSMC Fab 18 (P1-P3) Taiwan,
Southern Taiwan Science Park[220][221]		 17.08 2020 (P7 under construction) 300 5[222] 120,000 Foundry
TSMC Fab 18 (P4-P6) Taiwan,
Southern Taiwan Science Park		 2022 (planned), under construction 300 3[9][223][224] 120,000 Foundry
TSMC Fab 20 (P1-P4) Taiwan,
Hsinchu		 2024-2025 (planned) 300 2 Foundry
TSMC Fab 21 USA,
Arizona,
Phoenix		 12[225] 2024 (planned), P1 under construction[225] 300 5 20,000 Foundry
Epistar Fab F1[226] Taiwan,
Longtan Science Park		 LEDs
Epistar Fab A1[226] Taiwan,
Hsinchu Science Park		 LEDs
Epistar Fab N2[226] Taiwan,
Hsinchu Science Park		 LEDs
Epistar Fab N8[226] Taiwan,
Hsinchu Science Park		 LEDs
Epistar Fab N1[226] Taiwan,
Hsinchu Science Park		 LEDs
Epistar Fab N3[226] Taiwan,
Hsinchu Science Park		 LEDs
Epistar Fab N6[226] Taiwan,
Chunan Science Park		 LEDs
Epistar Fab N9[226] Taiwan,
Chunan Science Park		 LEDs
Epistar Fab H1[226] Taiwan,
Central Taiwan Science Park		 LEDs
Epistar Fab S1[226] Taiwan,
Tainan Science Park		 LEDs
Epistar Fab S3[226] Taiwan,
Tainan Science Park		 LEDs
Epistar (formerly TSMC)[227][228][229] Taiwan,
Hsin-Chu Science Park		 0.080 2011, second half LEDs
Lextar T01 Taiwan,
Hsinchu Science Park		 LEDs
GCS USA,
California,
Torrance[1]		 1999[1] 100 6,400 Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch Germany,
Baden-Württemberg,
Reutlingen		 1995[230] 150 ASIC, analog, power, SiC
Bosch Germany,
Saxony,
Dresden		 1.0[231] 2021 300 65
Bosch WaferFab Germany,
Baden-Württemberg,
Reutlingen		 0.708[232] 2010[230] 200 30,000 ASIC, analog, power, MEMS
STMicroelectronics AMK8 (second, newer fab) Singapore,
Ang Mo Kio		 1995 200
STMicroelectronics (formerly SGS Microelettronica) AMJ9 (first fab) Singapore,
Ang Mo Kio		 1984[233] 150, 200 6" 14 kpcs/day, 8" 1.4 kpcs/day Power-MOS/ IGBT/ bipolar/ CMOS
STMicroelectronics Crolles 1 / Crolles 200 France,
Auvergne-Rhône-Alpes,
Crolles		 1993 200 25,000
STMicroelectronics Crolles2 / Crolles 300 France,
Auvergne-Rhône-Alpes,
Crolles		 2003 300 90, 65, 45, 32, 28 20,000 FDSOI
STMicroelectronics Tours France,
Centre-Val de Loire,
Tours		 200 500 8": 9kpcs/W; 12" 400–1000/W ASIC
STMicroelectronics (formerly SGS-ATES) R2 (upgraded in 2001 from R1) Italy,
Lombardy,
Agrate Brianza		 1963 200
STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy,
Lombardy,
Agrate Brianza		 1963 200
STMicroelectronics Catania Italy,
Sicily,
Catania		 1997 150 (GaN), 200 GaN
STMicroelectronics Rousset France,
Provence-Alpes-Côte d'Azur,
Rousset		 2000 200
X-Fab Erfurt Germany,
Thuringia,
Erfurt		 1985[1] 200[234] 600–1000[234] 11200–[234] Foundry
X-Fab (formerly ZMD) Dresden Germany,
Saxony,
Dresden		 0.095[1] 1985[1] 200[235] 350–1000[235] 6000–[235] Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe) Itzehoe Germany,
Schleswig-Holstein,
Itzehoe		 200[236] 13000–[236] Foundry, MEMS
X-Fab (formerly 1st Silicon)[237][238] Kuching Malaysia,
Kuching		 1.89[1] 2000[1] 200[239] 130–350[239] 30,000–[239] Foundry
X-Fab (formerly Texas Instruments) Lubbock USA,
Texas,
Lubbock		 0.197[1] 1977[1] 150, 200[240] 600–1000[240] 15000–[240] Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[241] ACL-AMF France,
Île-de-France,
Corbeil-Essonnes		 1991, 1964[1] 200 130–350 Foundry, CMOS, RF SOI
CEITEC Brazil,
Rio Grande do Sul,
Porto Alegre		 2010 200 600–1000 RFID
IXYS Germany,
Hesse,
Lampertheim[242]		 IGBT[242]
IXYS UK,
England,
Wiltshire,
Chippenham[242]
IXYS USA,
Massachusetts[242]
IXYS USA,
California[242]
Samsung V1-Line[243] South Korea,
Hwaseong		 6 2020, February 20 300 7 Microprocessors, Foundry
Samsung S3-Line[244] South Korea,
Hwaseong		 10.2, 16.2 (planned)[245][246] 2017[245] 300 10 200,000 DRAM, VNAND, Foundry
Samsung S2-Line[247] USA,
Texas,
Austin		 16[248][249] 2011 300 65–11 92,000 Microprocessors, FDSOI, Foundry, NAND[250]
Samsung S1-Line[251] South Korea,
Giheung		 33 (total) 2005 (second phase), 1983 (first phase)[252][253] 300 65–7 62,000 Microprocessors, S.LSI, LEDs, FDSOI, Foundry[254]
Samsung Pyeongtaek[255][256][245] South Korea,
Pyeongtaek		 14.7, 27 (total)[257][249][258][259][260][261][262][160] 2017, July 6 300 14 450,000[263] V-NAND, DRAM, Foundry
Samsung 6 Line[264] South Korea,
Giheung		 200 180–65 Foundry
Samsung Samsung China Semiconductor[265] China,
Shaanxi Province		 DDR Memory
Samsung Samsung Suzhou Research Center (SSCR)[251] China,
Suzhou,
Suzhou Industrial Park		 DDR Memory
Samsung Onyang Complex[265] South Korea,
Chungcheongnam-do		 display.backend process.test
Samsung F1x1[266][245] China,
Xian		 2.3[267] 2014 (first phase, second phase is under review)[245] 300 20 100,000 VNAND
Samsung Giheung Campus[268] South Korea,
Gyeonggi-do,
Yongin		 LEDs
Samsung Hwasung Campus[268] South Korea,
Gyeonggi-do,
Hwaseong		 LEDs
Samsung Tianjin Samsung LED Co., Ltd.[268] China,
Tianjin,
Xiqing		 LEDs
Seagate USA,
Minnesota,
Minneapolis[269]
Seagate UK,
Northern Ireland[270][271][272][273]
Broadcom Limited (Previosly Avago) USA,
Colorado,
Fort Collins[274]
Cree Inc.[275] Durham USA,
North Carolina,
Durham		 Compound Semiconductors, LEDs
Cree Inc.[276] Research Triangle Park USA,
North Carolina		 GaN HEMT RF ICs
SMART Modular Technologies Brazil,
São Paulo,
Atibaia		 2006 Packaging
Changxin Memory Technologies China 7.2 2019 300 19, 17 125,000 DRAM[277]
Infineon Technologies Villach Austria,
Carinthia,
Villach		 1970[278] 100/150/200/300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany,
Saxony,
Dresden		 3[279] 1994–2011[280] 200/300 90
Infineon Technologies Kulim[281] Malaysia,
Kulim		 2006[282] 200/300 50,000
Infineon Technologies Kulim 2 Malaysia,
Kulim		 2015 200/300 50,000
Infineon Technologies Regensburg[283] Germany,
Bavaria,
Regensburg		 1959
Infineon Technologies Cegled[284] Hungary,
Pest,
Cegléd
Infineon Technologies Cheonan South Korea,
Cheonan-si
Infineon Technologies El Segundo USA,
California,
El Segundo[285]
Infineon Technologies Batam Indonesia,
Riau Islands,
Batam
Infineon Technologies Leominster USA,
Massachusetts,
Leominster
Infineon Technologies Malacca Malaysia,
Malacca
Infineon Technologies Mesa USA,
Arizona,
Mesa
Infineon Technologies Morgan Hill USA,
California,
Morgan Hill
Infineon Technologies Morrisville USA,
North Carolina,
Morrisville
Infineon Technologies Neubiberg Germany,
Bavaria,
Neubiberg
Infineon Technologies San Jose USA,
California,
San Jose
Infineon Technologies Singapore
Infineon Technologies Temecula USA,
California,
Temecula
Infineon Technologies Tijuana Mexico,
Baja California,
Tijuana
Infineon Technologies Warstein Germany,
North Rhine-Westphalia,
Warstein
Infineon Technologies Wuxi China,
Wuxi
Infineon Technologies - Cypress Semiconductor Fab25 USA,
Texas,
Austin		 1994 200 Flash / Logic
SkyWater Technology (formerly Cypress Semiconductor) (formerly Control Data) (formerly VTC) Minnesota fab USA,
Minnesota,
Bloomington		 1991 200 65, 90, 130, 180, 250, 350 Foundry, SOI, FDSOI, MEMS, SiPh, CNT, 3D packaging, superconducting ICs
D-Wave Systems[286] Superconducting Foundry[287] Quantum Processing Units (QPUs)[287]
GlobalFoundries (formerly AMD) Fab 1 Module 1[288] Germany,
Saxony,
Dresden		 3.6[1] 2005 300 22–45 35,000[1] Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD) Fab 1 Module 2 Germany,
Saxony,
Dresden		 4.9[1] 1999 300 22–45 25,000[1] Foundry, SOI
GlobalFoundries Fab 1 Module 3 Germany,
Saxony,
Dresden		 2.3[1] 2011[1] 300 22–45 6,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 2[209] Singapore 1.3[1] 1995[1] 200 350–600 56,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 3/5[209] Singapore 0.915, 1.2[1] 1997, 1995[1] 200 180–350 54,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 6[209] (merged into Fab 7) Singapore 1.4[1] 2000[1] 200, 300 (merged) 110–180 45,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 7[288] Singapore 4.6[1] 2005[1] 300 40, 65, 90, 110, 130 50,000 Foundry, Bulk CMOS, RF SOI
GlobalFoundries Fab 8[288] USA,
New York,
Malta		 4.6, 2.1, 13+ (total)[289][290] 2012, 2014[1] 300 12 / 14 / 22 / 28 60,000 Foundry, High-K Metal Gate,[291] SOI FinFET
GlobalFoundries Technology Development Center[1] USA,
New York,
Malta		 1.5[1] 2014[1]
GlobalFoundries (formerly IBM) Fab 9 USA,
Vermont,
Essex Junction		 200 90–350 40,000 Foundry, SiGe, RF SOI
(future ON Semiconductor) GlobalFoundries (formerly IBM)[292][293][294] Fab 10 USA,
New York,
East Fishkill		 2.5, +.29 (future)[289] 2002 300 90–22, 14 12,000-15,000[289] Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
SUNY Poly CNSE NanoFab 300 North[295] USA,
New York,
Albany		 .175, .050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200[296] USA,
New York,
Albany		 .016 1997 200
SUNY Poly CNSE NanoFab Central[295] USA,
New York,
Albany		 .150 2009 300 22
Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH) USA,
Texas,
Austin[1][297]		 0.065 1989[1] 200 10,000 MEMS, photonics, foundry
Opto Diode USA,
California,
Camarillo[298]
Optek Technology[61] 1968 100, 150 GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR

NORTHERN TELECOM EUROPE[61]) (formerly JDS Uniphase) (formerly Uniphase)

 Semiconductor Lasers, Photodiodes
Infinera USA,
California,
Sunnyvale[299][300]
Rogue Valley Microdevices[301][302][303] USA,
Oregon,
Medford		 2003 50.8mm to 300mm MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
IMT Fab 1 USA,
California,
Goleta		 2000 150, 200 350 20,000 Foundry: MEMS, Photonics, Sensors, Biochips
Sensera uDev-1 USA,
Massachusetts,
Woburn		 2014 150 700 1,000 MEMS, MicroDevice assembly
Rigetti Computing Fab-1[304][305][306] USA,
California,
Fremont		 130 Quantum Processors
NHanced Semiconductors[307] MNC USA,
North Carolina,
Morrisville		 2001 100, 150, 200 >=500 1000 MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Polar Semiconductor[308] FAB 1,2,3 USA,
Minnesota,
Bloomington		 200 BCD, HV, GMR
Noel Technologies[309] 450–51[310][309] 500–250[311]
Orbit Semiconductor[61] 100 CCD, CMOS
Entrepix USA,
Arizona,
Tempe[1]		 2003[1]
Medtronic USA,
Arizona,
Tempe[1]		 1973[1]
Technologies and Devices International USA,
Florida,
Silver Springs[1]		 2002[1]
Soraa Inc USA,
California[312][313]
Soraa Laser Diode[312]
Mirrorcle Technologies USA,
California,
Richmond[314]
HTE LABS HTE LABS USA,
California,
San Jose		 0.005 2009 100, 150 4000–1000 1,000 Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
HT Micron Brazil,
Rio Grande do Sul,
São Leopoldo		 2014 DRAM, eMCP, iMCP
Unitec do Brasil Brazil,
Minas Gerais,
Ribeirão das Neves		 Planned
Unitec Blue[315] Argentina,
Buenos Aires Province,
Chascomús		 0.3 (1.2 planned)[316] 2013 RFID, SIM, EMV
Everlight Yuan-Li Plant Taiwan,
Miao-Li		 LEDs
Everlight Pan-Yu Plant China LEDs
Everlight Tu-Cheng Plant Taiwan,
Taipei Country		 LEDs
Optotech[317] Taiwan,
Hsinchu		 LEDs
Arima Optoelectronics Taiwan,
Hsinchu[1]		 1999[1]
Episil Semiconductor Taiwan,
Hsinchu[1]		 1992, 1990, 1988[1]
Episil Semiconductor Taiwan,
Hsinchu[1]		 1992, 1990, 1988[1]
Creative Sensor Inc.[318][319] NanChang Creative Sensor China,
Jiangxi		 2007 Image Sensors
Creative Sensor Inc.[318] Wuxi Creative Sensor China,
JiangSu		 2002
Creative Sensor Inc.[318] Wuxi Creative Sensor Taiwan,
Taipei City		 1998
Visera Technologies[320] Headquarters Phase I Taiwan,
Hsinchu Science-based Industrial Park		 2007, September CMOS Image Sensors
Panjit Taiwan,
Kaohsiung[1]		 0.1 2003[1]
Nanosystem Fabrication Facility Hong Kong[321]
ASMC[322] FAB 1/2 China,
Shanghai		 1992, 1997[1] 200 600 78,000[1] BCD, HV
ASMC[322] FAB 3 China,
Shanghai		 2004[1] 200 250 12,000[1]
Beilling[323] China,
Shanghai		 150 1200 BiCMOS, CMOS
SiSemi[324] China,
Shenzhen,
Longgang High-tech Industrial Park[325]		 2004 130 Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi[325] 1997 100 Transistors
CRMicro (formerly CSMC)[326] Fab 1 1998[1] 150[327] 60,000[1] HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC) Fab 2 China,
Wuxi		 2008[1] 200[327] 180, 130 40,000[1] HV Analog, Foundry
CRMicro (formerly CSMC) Fab 3 1995[1] 200[327] 130 20,000[1]
CRMicro (formerly CSMC) Fab 5 2005[1] 30,000[1]
Hua Hong Semiconductor (Shanghai Huali - HLMC) HH Fab5 China,
Shanghai, Zhangjiang		 300 65/55 - 28 35,000 Foundry
Hua Hong Semiconductor (Shanghai Huali - HLMC) HH Fab6 China,
Shanghai, Kangqiao		 300 28/22 -14 40,000
Nexchip[9] N1[328] China,
Hefei		 Q4 2017 300 40,000 Display Drivers IC[329]
Nexchip[9] N2[328] China,
Hefei		 Under construction 300 40,000
Nexchip[9] N3[328] China,
Hefei		 Under construction 300 40,000
Nexchip[9] N4[328] China,
Hefei		 Under construction 300 40,000
Wandai[9] CQ China,
Chongqing		 Under construction 300 20,000
San'an Optoelectronics Tianjin San'an Optoelectronics Co., Ltd. China, Tianjin LEDs
San'an Optoelectronics Xiamen San'an Optoelectronics Technology Co., Ltd. China LEDs
San'an Optoelectronics Xiamen San'an Integrated Circuit China ICs
San'an Optoelectronics Xiamen San'an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Fujian Jing'an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Technology Co., Ltd. China LEDs
San'an Optoelectronics Luminus Summary USA LEDs
San'an[330] China,
Xiamen		 Foundry, GaN, Power, RF
Hua Hong Semiconductor HH Fab7 China, Wuxi 300 90-55 60,000[331] Foundry
Hua Hong Semiconductor HH Fab1 China,
Shanghai, Jinqiao		 200 95 65,000[332] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab2 China,
Shanghai, Zhangjiang		 200 180 60,000[333] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab3 China,
Shanghai, Zhangjiang		 200 90 53,000[334] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuaLei Optoelectronic China LEDs[335]
Sino King Technology[8] China,
Hefei		 2017 DRAM
APT Electronics China,
Guangzhou[1]		 2006[1]
Aqualite China,
Guangzhou[1]		 2006[1]
Aqualite China,
Wuhan[1]		 2008[1]
Xiamen Jaysun Semiconductor Manufacturing Fab 101 China,
Xiamen[1]		 0.035 2011[1]
Xiyue Electronics Technology Fab 1 China,
Xian[1]		 0.096 2007[1]
Hanking Electronics Fab 1 China,
Fushun		 2018 200 10,000 - 30,000 MEMS Foundry,

MEMS Design

MEMS Sensors (Inertial, Pressure, Ultrasound,
Piezoelectric, LiDar, Bolometer )

IoT Motion Sensors

CanSemi[336] China,
Guangzhou		 4 300 180–130 Foundry[337]
SensFab Singapore[1] 1995[1]
MIMOS Semiconductor Malaysia,
Kuala Lumpur[1]		 0.006, 0.135 1997, 2002[1]
Silterra Malaysia Fab1 Malaysia,
Kedah,
Kulim		 1.6 2000 200 250, 200, 180–90 46,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory 111 Factory North Korea,
Pyongyang		 1980s 3000[338]
Kim Il-sung Fab[338] Il-sung North Korea,
Pyongyang		 1965s 76 14/22[338] 25000–55000 OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS
DongbuHiTek Fab 1 South Korea,
Bucheon[1]		 1997[1] Foundry
DongbuHiTek Fab 2 South Korea,
Eumsung-Kun[1]		 2001[1] Foundry
DongbuHiTek Fab 2 Module 2 South Korea,
Eumsung-Kun[1]		 Foundry
Kodenshi AUK Group[339] Silicon FAB Line
Kodenshi AUK Group[339] Compound FAB Line
Kyocera SAW devices[137]
Seiko Instruments[340] China,
Shanghai
Seiko Instruments[340] Japan,
Akita
Seiko Instruments[340] Japan,
Takatsuka
NIPPON PRECISION CIRCUITS[61] Digital
Epson[341] T wing Japan,
Sakata		 1997 200 150–350 25,000
Epson[341] S wing Japan,
Sakata		 1991 150 350–1200 20,000
Olympus Corporation[342] Nagano Japan,
Nagano Prefecture		 MEMS[343]
Olympus Japan MEMS[344]
Shindengen Electric Manufacturing[345] Philippines,
Laguna,
Calamba
Shindengen Electric Manufacturing[345] Thailand,
Lamphun
NKK JFE Holdings[61] 200 6000 ,
New Japan Radio Kawagoe Works Japan,
Saitama Prefecture,
Fujimino City[346][347]		 1959[61] 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[348]

New Japan Radio Saga Electronics[349] Japan,
Saga Prefecture		 100, 150 4000, 400, 350[350] Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[348]

New Japan Radio NJR FUKUOKA Japan,
Fukuoka Prefecture,
Fukuoka City[349]		 2003[351] 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan,
Nagano,
Nagano City[352]
New Japan Radio Japan,
Nagano,
Ueda City[352]
Nichia YOKOHAMA TECHNOLOGY CENTER[353] Japan,
KANAGAWA		 LEDs
Nichia SUWA TECHNOLOGY CENTER[353] Japan,
NAGANO		 LEDs
AKM Semiconductor, Inc. FAB1 Japan,
Nobeoka		 Sensors
AKM Semiconductor, Inc. FAB2 Japan,
Nobeoka
AKM Semiconductor, Inc. FAB3 Japan,
Fuji		 Sensors
AKM Semiconductor, Inc. FAB FP Japan,
Hyuga
AKM Semiconductor, Inc. FAB5 Japan,
Ishinomaki		 LSI
Taiyo Yuden Japan,
Nagano		 SAW devices[137]
Taiyo Yuden Japan,
Ome		 SAW devices[137]
NMB SEMICONDUCTOR[61] DRAM
Elmos Semiconductor Germany,
North Rhine-Westphalia,
Dortmund[354]		 1984 200 800, 350 9000 HV-CMOS
United Monolithic Semiconductors[355] Germany,
Baden-Württemberg,
Ulm		 100 700, 250, 150, 100 Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors[355] France,
Île-de-France,
Villebon-sur-Yvette		 100 Foundry, BEOL
Innovative Ion Implant France,
Provence-Alpes-Côte d'Azur,
Peynier		 51–300[356]
Innovative Ion Implant UK,
Scotland,
Bathgate		 51–300[356]
nanoPHAB Netherlands,
North Brabant,
Eindhoven		 50–100 10–50 2–10 MEMS
Micron Semiconductor Ltd.[357] Lancing UK,
England,
West Sussex,
Lancing		 Detectors
PragmatIC Semiconductor FlexLogIC 001 UK,
England,
Durham		 0.020 2018 200 Helvellyn 4,000 Flexible Semiconductor /

Foundry and IDM

PragmatIC Semiconductor FlexLogIC 002 UK,
England,
Durham		 0.050 2023 300 Helvellyn 15,000 Flexible Semiconductor /

Foundry and IDM

INEX Microtechnology UK,
England,
Northumberland,
Newcastle upon Tyne		 2014 150 Foundry
CSTG UK,
Scotland,
Glasgow[1][358]		 2003[1] 76, 100 InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix UK,
Scotland,
Glasgow[1]		 0.011 2000[1]
Silex Microsystems Sweden,
Stockholm County,
Järfälla[1]		 0.009, 0.032 2003, 2009[1]
Integral Belarus,
Minsk		 1963 100, 150, 200 2000, 1500, 350
Crocus Nano Electronics CNE Russia,
Moscow		 2015 300 65 4000 MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors, foundry
Mikron Russia,
Moscow,
Zelenograd		 65–180
VSP Mikron WaferFab[359] Russia,
Voronezh Oblast,
Voronezh		 1959 100/150 900+ 6000 Analog, power
Semikron Nbg Fab Germany,
Nuremberg		 1984 150 3500 70000 Bipolar, Power Semiconductors

Number of open fabs currently listed here: 535

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants
Company Plant Name Plant Location Plant Cost (in US$ Billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products Ended Production
Soviet Union Jupiter Ukraine,
Kiev Oblast,
Pripiat		 1980 Secret government semiconductor fab closed by Chernobyl disaster 1996
Latvia VEF Latvia,
Riga		 1960 Semi-secret government semiconductor fab and a major research center closed by Colapse of USSR to separate Latvia from the Russian military manufacturing complex. 1999
Tower Semiconductor (formerly Micron) Fab 4[360] Japan,
Hyōgo,
Nishiwaki		 0.450[1] 1992[1] 200 95 60,000[1] DRAM, foundry 2014
Tower Semiconductor - Tacoma China,
Jiangsu,
Nanjing[361][362]		 halted, bankruptcy in June 2020[363] 200, 300 (planned) Foundry 2020
Fujian Jinhua (JHICC)[9][364][365][366] F2 China,
Fujian,
Jinjiang		 5.65[367] 2018 (planned) 300 22 60,000 DRAM[8] 2018
Decoma[9] F2 China,
Jiangsu,
Huai'an		 Under construction 300 20,000 2020
Wuhan Hongxin Semiconductor Manufacturing (HSMC)[368] China,
Hubei,
Wuhan		 2019 (halted) 300 14, 7 Foundry 2020
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[9] SZ China,
Guangdong,
Shenzhen		 12.5 Planned 300 50,000 DRAM 2019 (just plan)
TSMC Fab 1[211] Taiwan
Hsinchu,
Baoshan		 1987 150 20,000 Foundry March 9, 2001
UMC Fab 1 Japan,
Chiba,
Tateyama		 0.543[1] 1997[1] 200 40,000 Foundry 2012
SK Hynix E-4 USA,
Oregon,
Eugene		 1.3 2007 200 30,000 DRAM 2008[369]
Symetrix - Panasonic[370] Brazil 0.9 (planned) planned FeRAM (just plan)
Rohm (formerly Data General) USA,
California,
Sunnyvale[371]
Kioxia Fab 1 (at Yokkaichi Operations)[372] Japan,
Mie,
Yokkaichi		 1992 200 400 35,000 SRAM, DRAM September, 2001
NEC Livingston[373] United Kingdom,
Scotland,
West Lothian,
Livingston		 4.5 (total) 1981 200 250, 180 30,000 DRAM April 2001
LFoundry (formerly Renesas Electronics)[374] Germany,
Bavaria,
Landshut		 1992 200 2011
LFoundry (formerly Atmel)[375] France,
Bouches-du-Rhône,
Rousset		 ? 200 25.000[376]
Atmel (formerly Siemens) Fab 9[377] United Kingdom,
Tyne and Wear,
North Tyneside		 1.53[378] 1998[379] DRAM[379] 2007[380]
EI Niš Ei Poluprovodnici Serbia,
Nišava,
Niš		 1962 100 2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) UK,
Wiltshire,
Swindon[1]
Telefunken Semiconductors Heilbronn, HNO-Line Germany,
Baden-Württemberg,
Heilbronn		 0.125[1] 1993[1] 150 10,000 2015
Qimonda Richmond[381] USA,
Virginia,
Richmond		 3 2005 300 65 38,000 DRAM January, 2009
STMicroelectronics (formerly Nortel[61]) 100, 150 NMOS, CMOS
Freescale Semiconductor (formerly Motorola) Toulouse Fab[382] France,
Haute-Garonne,
Toulouse		 1969 150 650 Automotive 2012[383]
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) Sendai Fab[384] Japan,
Miyagi,
Sendai		 1987 150, 200 500 DRAM, microcontrollers, analog, sensors 2009?
Agere (formerly Lucent) (formerly AT&T)[385] Spain,
Madrid,
Tres Cantos		 0.67[386] 1987[387] 300, 350, 500 CMOS 2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) USA,
Pennsylvania,
Audubon		 1969
1976
1995		 1000 1976
1992[388]
2001
Integrated Device Technology USA,
California,
Salinas		 1985 150 350–800[129] 2002
ON Semiconductor (formerly Cherry Semiconductor) USA,
Rhode Island,
Cranston		 2004
Intel Fab 8[38] Israel,
Jerusalem District,
Jerusalem		 1985 150 Microprocessors, Chipsets, Microcontrollers[39] 2007
Intel Fab D2 USA,
California,
Santa Clara		 1989 200 130 8,000 Microprocessors, Chipsets, Flash memory 2009
Intel Fab 17[29][28] USA,
Massachusetts,
Hudson		 1998 200 130 Chipsets and other[28] 2014
Fairchild Semiconductor (formerly National Semiconductor) West Jordan USA,
Utah,
West Jordan		 1977 150 2015[389]
Texas Instruments HFAB USA,
Texas,
Houston		 1967 150 2013[390]
Texas Instruments (formerly Silicon Systems) Santa Cruz USA,
California,
Santa Cruz		 0.250 1980 150 800 80,000 HDD 2001
Texas Instruments (formerly National Semiconductor) Arlington USA,
Texas,
Arlington		 1985 150 80000, 35000 2010
Unknown (fortune 500 company) USA,
East Coast[391]		 150 1,600 MEMS 2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) KFAB USA,
Missouri,
Lee's Summit		 1994[392] 130 2017[393]
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) USA,
Florida,
Apopka[53][394]		 SAW filters 2019
GlobalFoundries Abu Dhabi[1] UAE,
Emirate of Abu Dhabi,
Abu Dhabi[1]		 6.8[1] (planned) 2016[1] (planned) 300 110–180 45,000 Foundry 2011 (plan stopped)
GlobalFoundries - Chengdu China,
Sichuan,
Chengdu[395]		 10 (planned) 2018 (planned), 2019 (second phase) 300 180/130 (cancelled), 22 (second phase) 20,000 (85,000 planned) Foundry, FDSOI (second phase) 2020 (was idle)
Tondi Elektroonika[396] A-1381 Soviet Union,
Estonia,
Harju,
Tallinn		 1958 Radio equipment, Transisors, Photodiode 1978
Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA) USA,
Ohio,
Findlay		 1954 Semiconductors, Optoelectronics, Integrated Circuits, Research[397] 2003[398]

Number of closed fabs currently listed here: 43

See also

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Samsung capacity

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